PMFPB8032XP,115
MOSFET P-CH 20V 2.7A HUSON6
Transistors Fets Mosfets Single
6-UFDFN Exposed Pad
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PMFPB8032XP,115 |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 102mOhm @ 2.7A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 8.6 nC @ 4.5 V |
| Input Capacitance (Ciss) | 550 pF @ 10 V |
| Power Dissipation (Max) | 485mW (Ta), 6.25W (Tc) |
| Drive Voltage | 4.5V |
| Supplier Device Package | 6-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PMFPB8032XP,115 by Nexperia USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 102mOhm @ 2.7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMFPB8032XP,115
Alternatives & Replacements
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PMFPB8040XP,115
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2.6A, 20V, P-CHANNEL MOSFET
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SMALL SIGNAL FIELD-EFFECT TRANSI
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 2.7A, 4.5V |
| Power Dissipation (Max) | 485mW (Ta), 6.25W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
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