FDFME3N311ZT
SMALL SIGNAL FIELD-EFFECT TRANSI
Transistors Fets Mosfets Single
6-UFDFN Exposed Pad
PowerTrench®
Active
Price available on request
MOQ: 1312 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDFME3N311ZT |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 299mOhm @ 1.6A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 1.4 nC @ 4.5 V |
| Input Capacitance (Ciss) | 75 pF @ 15 V |
| Power Dissipation (Max) | 600mW (Ta) |
| Supplier Device Package | 6-UMLP (1.6x1.6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDFME3N311ZT by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 299mOhm @ 1.6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDFME3N311ZT
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 1.6A, 4.5V |
| Power Dissipation (Max) | 600mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
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