PMDPB85UPE,115
NOW NEXPERIA PMDPB85UPE - SMALL
Transistors Fets Mosfets Arrays
6-UFDFN Exposed Pad
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Price available on request
MOQ: 2522 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PMDPB85UPE,115 |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 103mOhm @ 1.3A, 4.5V |
| Vgs(th) (Max) | 950mV @ 250µA |
| Gate Charge (Qg) | 8.1nC @ 4.5V |
| Input Capacitance (Ciss) | 514pF @ 10V |
| Power Dissipation (Max) | 515mW |
| Supplier Device Package | 6-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PMDPB85UPE,115 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 103mOhm @ 1.3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMDPB85UPE,115
Alternatives & Replacements
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MOSFET 2P-CH 20V 1.1A 6UDFN
DMN2028UFU-7
MOSFET 2N-CH 20V 7.5A UDFN2030-6
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 515mW |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 1.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 514pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
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