PMDPB70EN,115
PMDPB70EN - SMALL SIGNAL, HUSON6
Transistors Fets Mosfets Arrays
6-UFDFN Exposed Pad
Obsolete
Price available on request
MOQ: 1603 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PMDPB70EN,115 |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 57mOhm @ 3.5A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 4.5nC @ 10V |
| Input Capacitance (Ciss) | 130pF @ 15V |
| Power Dissipation (Max) | 510mW |
| Supplier Device Package | 6-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PMDPB70EN,115 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 57mOhm @ 3.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMDPB70EN,115
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 510mW |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
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