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NXP USA Inc.TO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

PHB11N06LT,118

MOSFET N-CH 55V 10.3A D2PAK

PHB11N06LT,118 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPHB11N06LT,118
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)130mOhm @ 5.5A, 10V
Vgs(th) (Max)2V @ 1mA
Gate Charge (Qg)5.2 nC @ 5 V
Input Capacitance (Ciss)330 pF @ 25 V
Power Dissipation (Max)33W (Tc)
Drive Voltage5V, 10V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

PHB11N06LT,118 by NXP USA Inc. is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 130mOhm @ 5.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs130mOhm @ 5.5A, 10V
Power Dissipation (Max)33W (Tc)
Gate Charge (Qg) (Max) @ Vgs5.2 nC @ 5 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C10.3A (Tc)

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