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NXP USA Inc.SC-100, SOT-669RoHS

PH3075L,115

MOSFET N-CH 75V 30A LFPAK56

PH3075L,115 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

SC-100, SOT-669

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPH3075L,115
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)28mOhm @ 15A, 10V
Vgs(th) (Max)2.3V @ 1mA
Gate Charge (Qg)19 nC @ 5 V
Input Capacitance (Ciss)2070 pF @ 25 V
Power Dissipation (Max)75W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageLFPAK56, Power-SO8
RoHSRoHS
Part StatusObsolete

Application & Notes

PH3075L,115 by NXP USA Inc. is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-100, SOT-669 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 28mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 1mA
Rds On (Max) @ Id, Vgs28mOhm @ 15A, 10V
Power Dissipation (Max)75W (Tc)
Gate Charge (Qg) (Max) @ Vgs19 nC @ 5 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds2070 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)

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