RJK0301DPB-00#J0
MOSFET N-CH 30V 60A LFPAK
Transistors Fets Mosfets Single
SC-100, SOT-669
Obsolete
Price available on request
MOQ: 160 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJK0301DPB-00#J0 |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 2.8mOhm @ 30A, 10V |
| Gate Charge (Qg) | 32 nC @ 4.5 V |
| Input Capacitance (Ciss) | 5000 pF @ 10 V |
| Power Dissipation (Max) | 65W (Tc) |
| Supplier Device Package | LFPAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK0301DPB-00#J0 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-100, SOT-669 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.8mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK0301DPB-00#J0
Alternatives & Replacements
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POWER FIELD-EFFECT TRANSISTOR
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| Power Dissipation (Max) | 65W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
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