PBHV8515QAZ
TRANS NPN 150V 0.5A SOT1215
Transistors Bipolar Bjt Single
3-XDFN Exposed Pad
Automotive, AEC-Q101
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PBHV8515QAZ |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 325 mW |
| Supplier Device Package | DFN1010D-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PBHV8515QAZ by Nexperia USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBHV8515QAZ
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All Technical Specifications
| Power - Max | 325 mW |
| Transistor Type | NPN |
| Frequency - Transition | 75MHz |
| Vce Saturation (Max) @ Ib, Ic | 60mV @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 200mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
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