PBSS4230QAZ
NEXPERIA PBSS4230QA - 30V, 2A NP
Transistors Bipolar Bjt Single
3-XDFN Exposed Pad
Active
Price available on request
MOQ: 4840 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PBSS4230QAZ |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 325 mW |
| Supplier Device Package | DFN1010D-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PBSS4230QAZ by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PBSS4230QAZ
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All Technical Specifications
| Power - Max | 325 mW |
| Transistor Type | NPN |
| Frequency - Transition | 190MHz |
| Vce Saturation (Max) @ Ib, Ic | 190mV @ 50mA, 1A |
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
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