NVMFD016N06CT1G
MOSFET N-CH 60V 8DFN 5X6
Transistors Fets Mosfets Arrays
8-PowerTDFN
Automotive, AEC-Q101
Active
Price available on request
MOQ: 1500 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NVMFD016N06CT1G |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 16.3mOhm @ 5A, 10V |
| Vgs(th) (Max) | 4V @ 25µA |
| Gate Charge (Qg) | 6.9nC @ 10V |
| Input Capacitance (Ciss) | 489pF @ 30V |
| Power Dissipation (Max) | 3.1W (Ta), 36W (Tc) |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NVMFD016N06CT1G by onsemi is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16.3mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NVMFD016N06CT1G
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 3.1W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Rds On (Max) @ Id, Vgs | 16.3mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 489pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 32A (Tc) |
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