FDMS3616S
SMALL SIGNAL N-CHANNEL MOSFET
Transistors Fets Mosfets Arrays
8-PowerTDFN
PowerTrench®
Obsolete
Price available on request
MOQ: 390 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMS3616S |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 6.6mOhm @ 16A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 27nC @ 10V |
| Input Capacitance (Ciss) | 1765pF @ 13V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | 8-PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDMS3616S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.6mOhm @ 16A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMS3616S
Alternatives & Replacements
View All →NTMFD4C86NT3G
MOSFET 2N-CH 30V 11.3/18.1A 8DFN
FDMS3686S
MOSFET 2N-CH 30V 13A/23A POWER56
NTMFD4C85NT1G
MOSFET 2N-CH 30V 8DFN
NTMFD4C86NT1G
MOSFET 2N-CH 30V 8DFN
BSC0924NDIATMA1
MOSFET 2N-CH 30V 17A/32A TISON8
FDMS3600AS
SMALL SIGNAL FIELD-EFFECT TRANSI
All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 16A, 18A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.