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onsemiTO-261-4, TO-261AARoHS

NVF3055L108T1G

MOSFET N-CH 60V 3A SOT223

NVF3055L108T1G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Series

Automotive, AEC-Q101

Status

Not For New Designs

$1.01 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNVF3055L108T1G
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)120mOhm @ 1.5A, 5V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)15 nC @ 5 V
Input Capacitance (Ciss)440 pF @ 25 V
Power Dissipation (Max)1.3W (Ta)
Drive Voltage5V
Supplier Device PackageSOT-223 (TO-261)
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

NVF3055L108T1G by onsemi is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 120mOhm @ 1.5A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs120mOhm @ 1.5A, 5V
Power Dissipation (Max)1.3W (Ta)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)

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