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onsemi8-PowerWDFNRoHS

NTTFS4H07NTWG

MOSFET N-CH 25V 18.5A/66A 8WDFN

NTTFS4H07NTWG by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerWDFN

Status

Obsolete

$0.70 / unit (market reference)

MOQ: 429 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTTFS4H07NTWG
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)4.8mOhm @ 30A, 10V
Vgs(th) (Max)2.1V @ 250µA
Gate Charge (Qg)12.4 nC @ 10 V
Input Capacitance (Ciss)771 pF @ 12 V
Power Dissipation (Max)2.64W (Ta), 33.8W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-WDFN (3.3x3.3)
RoHSRoHS
Part StatusObsolete

Application & Notes

NTTFS4H07NTWG by onsemi is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.8mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA
Rds On (Max) @ Id, Vgs4.8mOhm @ 30A, 10V
Power Dissipation (Max)2.64W (Ta), 33.8W (Tc)
Gate Charge (Qg) (Max) @ Vgs12.4 nC @ 10 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds771 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C18.5A (Ta), 66A (Tc)

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