NTMT150N65S3HF
POWER MOSFET, N-CHANNEL, SUPERFE
Transistors Fets Mosfets Single
4-PowerTSFN
SuperFET® III, FRFET®
Active
$4.12 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTMT150N65S3HF |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 150mOhm @ 12A, 10V |
| Vgs(th) (Max) | 5V @ 540µA |
| Gate Charge (Qg) | 43 nC @ 10 V |
| Input Capacitance (Ciss) | 1985 pF @ 400 V |
| Power Dissipation (Max) | 192W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 4-PQFN (8x8) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTMT150N65S3HF by onsemi is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-PowerTSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTMT150N65S3HF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 540µA |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V |
| Power Dissipation (Max) | 192W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1985 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
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