What is the minimum order quantity for NTB7D3N15MC?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

How long does shipping take for NTB7D3N15MC?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for NTB7D3N15MC?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for NTB7D3N15MC?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

onsemiTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

NTB7D3N15MC

Parameters

Parameter	Value
Brand	onsemi
Model	NTB7D3N15MC
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	150 V
Rds On (Max)	7.3mOhm @ 62A, 10V
Vgs(th) (Max)	4.5V @ 342µA
Gate Charge (Qg)	53 nC @ 10 V
Input Capacitance (Ciss)	4250 pF @ 75 V
Power Dissipation (Max)	3.75W (Ta), 166W (Tc)
Drive Voltage	8V, 10V
Supplier Device Package	D²PAK-3 (TO-263-3)
RoHS	RoHS
Part Status	Active

Application & Notes

NTB7D3N15MC by onsemi is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.3mOhm @ 62A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5V @ 342µA
Rds On (Max) @ Id, Vgs	7.3mOhm @ 62A, 10V
Power Dissipation (Max)	3.75W (Ta), 166W (Tc)
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Drain to Source Voltage (Vdss)	150 V
Input Capacitance (Ciss) (Max) @ Vds	4250 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Current - Continuous Drain (Id) @ 25°C	15.2A (Ta), 101A (Tc)

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