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Renesas Electronics America IncTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

NP88N075KUE-E1-AY

MOSFET N-CH 75V 88A TO263

NP88N075KUE-E1-AY by Renesas Electronics America Inc
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Obsolete

Datasheet

View Datasheet ↗

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MOQ: 1 pcs

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Parameters

ParameterValue
BrandRenesas Electronics America Inc
ModelNP88N075KUE-E1-AY
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)8.5mOhm @ 44A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)230 nC @ 10 V
Input Capacitance (Ciss)12300 pF @ 25 V
Power Dissipation (Max)1.8W (Ta), 288W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263
RoHSRoHS
Part StatusObsolete

Application & Notes

NP88N075KUE-E1-AY by Renesas Electronics America Inc is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.5mOhm @ 44A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NP88N075KUE-E1-AY

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs8.5mOhm @ 44A, 10V
Power Dissipation (Max)1.8W (Ta), 288W (Tc)
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds12300 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C88A (Tc)

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