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Renesas Electronics America IncTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

NP48N055KLE-E1-AY

MOSFET N-CH 55V 48A TO263

NP48N055KLE-E1-AY by Renesas Electronics America Inc
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Obsolete

Datasheet

View Datasheet ↗

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MOQ: 1 pcs

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Parameters

ParameterValue
BrandRenesas Electronics America Inc
ModelNP48N055KLE-E1-AY
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)17mOhm @ 24A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)60 nC @ 10 V
Input Capacitance (Ciss)3000 pF @ 25 V
Power Dissipation (Max)1.8W (Ta), 85W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-263
RoHSRoHS
Part StatusObsolete

Application & Notes

NP48N055KLE-E1-AY by Renesas Electronics America Inc is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 17mOhm @ 24A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NP48N055KLE-E1-AY

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs17mOhm @ 24A, 10V
Power Dissipation (Max)1.8W (Ta), 85W (Tc)
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C48A (Tc)

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