What is the minimum order quantity for NP40N10PDF-E1-AY?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

How long does shipping take for NP40N10PDF-E1-AY?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for NP40N10PDF-E1-AY?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for NP40N10PDF-E1-AY?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Renesas Electronics America IncTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

NP40N10PDF-E1-AY

Name: NP40N10PDF-E1-AY
Brand: Renesas Electronics America Inc
SKU: NP40N10PDF-E1-AY

MOSFET N-CH 100V 40A TO263

NP40N10PDF-E1-AY by Renesas Electronics America Inc

Parameters

Parameter	Value
Brand	Renesas Electronics America Inc
Model	NP40N10PDF-E1-AY
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	175°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Rds On (Max)	27mOhm @ 20A, 10V
Vgs(th) (Max)	2.5V @ 250µA
Gate Charge (Qg)	71 nC @ 10 V
Input Capacitance (Ciss)	3150 pF @ 25 V
Power Dissipation (Max)	1.8W (Ta), 120W (Tc)
Drive Voltage	4.5V, 10V
Supplier Device Package	TO-263 (D²Pak)
RoHS	RoHS
Part Status	Obsolete

Application & Notes

NP40N10PDF-E1-AY by Renesas Electronics America Inc is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 27mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NP40N10PDF-E1-AY

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →

onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB8442-F085

MOSFET N-CH 40V 28A TO263AB

Request QuoteRFQ →

onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTB90N02T4

MOSFET N-CH 24V 90A D2PAK

Request QuoteRFQ →

Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

Request QuoteRFQ →

Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

N-CHANNEL POWER MOSFET

Request QuoteRFQ →

Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

Request QuoteRFQ →

Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

Request QuoteRFQ →

All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Rds On (Max) @ Id, Vgs	27mOhm @ 20A, 10V
Power Dissipation (Max)	1.8W (Ta), 120W (Tc)
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	3150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.