NP29N04QUK-E1-AY
ABU / MOSFET
Transistors Fets Mosfets Arrays
8-PowerLDFN
Automotive, AEC-Q101
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | NP29N04QUK-E1-AY |
| Package / Case | 8-PowerLDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) | 10.1mOhm @ 15A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 29nC @ 10V |
| Input Capacitance (Ciss) | 1500pF @ 25V |
| Power Dissipation (Max) | 1W (Ta), 44W (Tc) |
| Supplier Device Package | 8-HSON (5x5.4) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NP29N04QUK-E1-AY by Renesas Electronics America Inc is an N-channel power MOSFET rated at 40V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerLDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.1mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NP29N04QUK-E1-AY
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 1W (Ta), 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 10.1mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
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