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Diodes Incorporated8-PowerLDFNRoHS

DMN3012LEG-7

MOSFET BVDSS: 25V-30V POWERDI333

Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerLDFN

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMN3012LEG-7
Package / Case8-PowerLDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)30V
Rds On (Max)12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max)2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg)6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss)850pF @ 15V, 1480pF @ 15V
Power Dissipation (Max)2.2W (Tc)
Supplier Device PackagePowerDI3333-8 (Type D)
RoHSRoHS
Part StatusActive

Application & Notes

DMN3012LEG-7 by Diodes Incorporated is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerLDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Power - Max2.2W (Tc)
Vgs(th) (Max) @ Id2.1V @ 250µA, 1.15V @ 250µA
Rds On (Max) @ Id, Vgs12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 4.5V, 12.6nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 15V, 1480pF @ 15V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 20A (Tc)

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