NP100N04PUK-E1-AY
N-CHANNEL MOSFET
Transistors Fets Mosfets Single
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Active
Price available on request
MOQ: 192 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NP100N04PUK-E1-AY |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 2.3mOhm @ 50A, 10V |
| Gate Charge (Qg) | 120 nC @ 10 V |
| Input Capacitance (Ciss) | 7050 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta), 176W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-263 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NP100N04PUK-E1-AY by Rochester Electronics, LLC is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-4, D²Pak (3 Leads + Tab), TO-263AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.3mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NP100N04PUK-E1-AY
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 50A, 10V |
| Power Dissipation (Max) | 1.8W (Ta), 176W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7050 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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