IPB80N04S3-04
MOSFET N-CH 40V 80A TO263-3
Transistors Fets Mosfets Single
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Automotive, AEC-Q101, OptiMOS™
Active
Price available on request
MOQ: 299 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IPB80N04S3-04 |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 4.1mOhm @ 80A, 10V |
| Vgs(th) (Max) | 4V @ 90µA |
| Gate Charge (Qg) | 80 nC @ 10 V |
| Input Capacitance (Ciss) | 5200 pF @ 25 V |
| Power Dissipation (Max) | 136W (Tc) |
| Supplier Device Package | PG-TO263-3-1 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IPB80N04S3-04 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-4, D²Pak (3 Leads + Tab), TO-263AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.1mOhm @ 80A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPB80N04S3-04
Alternatives & Replacements
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MOSFET N-CH 650V 13A TO263-3
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 80A, 10V |
| Power Dissipation (Max) | 136W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
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