MTB50P03HDLT4G
MOSFET P-CH 30V 50A D2PAK
Transistors Fets Mosfets Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Not For New Designs
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | MTB50P03HDLT4G |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 25mOhm @ 25A, 5V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 100 nC @ 5 V |
| Input Capacitance (Ciss) | 4900 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Drive Voltage | 5V |
| Supplier Device Package | D²PAK |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
MTB50P03HDLT4G by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 25A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MTB50P03HDLT4G
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
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