MSCSM170DUM11T3AG
PM-MOSFET-SIC-SP3F
Transistors Fets Mosfets Arrays
Module
Active
$279.75 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | MSCSM170DUM11T3AG |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Source |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Rds On (Max) | 11.3mOhm @ 120A, 20V |
| Vgs(th) (Max) | 3.2V @ 10mA |
| Gate Charge (Qg) | 712nC @ 20V |
| Input Capacitance (Ciss) | 13200pF @ 1000V |
| Power Dissipation (Max) | 1140W (Tc) |
| Supplier Device Package | SP3F |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MSCSM170DUM11T3AG by Microchip Technology is an N-channel power MOSFET rated at 1700V (1.7kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.3mOhm @ 120A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MSCSM170DUM11T3AG
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 1140W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 10mA |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 120A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 712nC @ 20V |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
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