PC
Microchip TechnologyModuleRoHS

MSCSM170DUM058AG

PM-MOSFET-SIC-SP6C

Subcategory

Transistors Fets Mosfets Arrays

Package

Module

Status

Active

$472.68 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandMicrochip Technology
ModelMSCSM170DUM058AG
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
FET Type2 N-Channel (Dual) Common Source
Drain to Source Voltage (Vdss)1700V (1.7kV)
Rds On (Max)7.5mOhm @ 180A, 20V
Vgs(th) (Max)3.3V @ 15mA
Gate Charge (Qg)1068nC @ 20V
Input Capacitance (Ciss)19800pF @ 1000V
Power Dissipation (Max)1642W (Tc)
RoHSRoHS
Part StatusActive

Application & Notes

MSCSM170DUM058AG by Microchip Technology is an N-channel power MOSFET rated at 1700V (1.7kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.5mOhm @ 180A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual) Common Source
FET FeatureSilicon Carbide (SiC)
Power - Max1642W (Tc)
Vgs(th) (Max) @ Id3.3V @ 15mA
Rds On (Max) @ Id, Vgs7.5mOhm @ 180A, 20V
Gate Charge (Qg) (Max) @ Vgs1068nC @ 20V
Drain to Source Voltage (Vdss)1700V (1.7kV)
Input Capacitance (Ciss) (Max) @ Vds19800pF @ 1000V
Current - Continuous Drain (Id) @ 25°C353A (Tc)

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