MCB60I1200TZ-TUB
SICFET N-CH 1.2KV 90A TO268AA
Transistors Fets Mosfets Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Price available on request
MOQ: 30 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | MCB60I1200TZ-TUB |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 34mOhm @ 50A, 20V |
| Vgs(th) (Max) | 4V @ 15mA |
| Gate Charge (Qg) | 160 nC @ 20 V |
| Input Capacitance (Ciss) | 2790 pF @ 1000 V |
| Drive Voltage | 20V |
| Supplier Device Package | TO-268AA (D3Pak-HV) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
MCB60I1200TZ-TUB by IXYS is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 34mOhm @ 50A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MCB60I1200TZ-TUB
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2790 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
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