LND01K1-G
MOSFET N-CH 9V 330MA SOT23-5
Transistors Fets Mosfets Single
SC-74A, SOT-753
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | LND01K1-G |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Operating Temperature | -25°C ~ 125°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 9 V |
| Rds On (Max) | 1.4Ohm @ 100mA, 0V |
| Input Capacitance (Ciss) | 46 pF @ 5 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Drive Voltage | 0V |
| Supplier Device Package | SOT-23-5 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
LND01K1-G by Microchip Technology is an N-channel power MOSFET rated at 9 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-74A, SOT-753 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 100mA, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for LND01K1-G
Alternatives & Replacements
View All →PMPB27EP,115
30 V, SINGLE P-CHANNEL TRENCH MO
PMXB65UPE147
P-CHANNEL MOSFET
NXS7002AK215
SMALL SIGNAL FET
BSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4
UPA2351T1G(2)-E4-A
POWER FIELD-EFFECT TRANSISTOR
RJK0397DPA-0G#J7A
POWER TRANSISTOR, MOSFET
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +0.6V, -12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 100mA, 0V |
| Power Dissipation (Max) | 360mW (Ta) |
| Drain to Source Voltage (Vdss) | 9 V |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 5 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Current - Continuous Drain (Id) @ 25°C | 330mA (Tj) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.