IXTF200N10T
MOSFET N-CH 100V 90A I4PAC
Transistors Fets Mosfets Single
i4-Pac™-5
Trench
Active
Price available on request
MOQ: 25 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXTF200N10T |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 7mOhm @ 50A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 152 nC @ 10 V |
| Input Capacitance (Ciss) | 9400 pF @ 25 V |
| Power Dissipation (Max) | 156W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXTF200N10T by IXYS is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The i4-Pac™-5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXTF200N10T
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 50A, 10V |
| Power Dissipation (Max) | 156W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
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