IXFT26N100XHV
MOSFET N-CH 1000V 26A TO268HV
Transistors Fets Mosfets Single
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
HiPerFET™, Ultra X
Active
$18.70 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXFT26N100XHV |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1000 V |
| Rds On (Max) | 320mOhm @ 500mA, 10V |
| Vgs(th) (Max) | 6V @ 4mA |
| Gate Charge (Qg) | 113 nC @ 10 V |
| Input Capacitance (Ciss) | 3290 pF @ 25 V |
| Power Dissipation (Max) | 860mW (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-268HV (IXFT) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXFT26N100XHV by IXYS is an N-channel power MOSFET rated at 1000 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 320mOhm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IXFT26N100XHV
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 6V @ 4mA |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 500mA, 10V |
| Power Dissipation (Max) | 860mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta) |
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