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Vishay SiliconixTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IRL530STRR

MOSFET N-CH 100V 15A D2PAK

IRL530STRR by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Obsolete

Datasheet

View Datasheet ↗

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelIRL530STRR
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)160mOhm @ 9A, 5V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)28 nC @ 5 V
Input Capacitance (Ciss)930 pF @ 25 V
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Drive Voltage4V, 5V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusObsolete

Application & Notes

IRL530STRR by Vishay Siliconix is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 160mOhm @ 9A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IRL530STRR

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs160mOhm @ 9A, 5V
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Gate Charge (Qg) (Max) @ Vgs28 nC @ 5 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds930 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Current - Continuous Drain (Id) @ 25°C15A (Tc)

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