IRFS59N10DTRR
MOSFET N-CH 100V 59A D2PAK
Transistors Fets Mosfets Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HEXFET®
Obsolete
Price available on request
MOQ: 9 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | WEC |
| Model | IRFS59N10DTRR |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 25mOhm @ 35.4A, 10V |
| Vgs(th) (Max) | 5.5V @ 250µA |
| Gate Charge (Qg) | 114 nC @ 10 V |
| Input Capacitance (Ciss) | 2450 pF @ 25 V |
| Supplier Device Package | D2PAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRFS59N10DTRR by WEC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 35.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFS59N10DTRR
Alternatives & Replacements
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
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