IRFD213
MOSFET N-CH 250V 450MA 4DIP
Transistors Fets Mosfets Single
4-DIP (0.300", 7.62mm)
Obsolete
$0.59 / unit (market reference)
MOQ: 507 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRFD213 |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 250 V |
| Rds On (Max) | 2Ohm @ 270mA, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) | 140 pF @ 25 V |
| Supplier Device Package | 4-HVMDIP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRFD213 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2Ohm @ 270mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFD213
Alternatives & Replacements
View All →IRFD113
MOSFET N-CH 60V 800MA 4DIP
IRFD110
1A, 100V, 0.600 OHM, N-CHANNEL
IRFD9120
MOSFET P-CH 100V 1A 4DIP
IRFD123
MOSFET N-CH 100V 1.3A 4DIP
IRFD9123
MOSFET P-CH 100V 1A 4DIP
IRFD9110
0.7A 100V 1.200 OHM P-CHANNEL
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 270mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
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