IRF6641TRPBF
IRF6641 - 12V-300V N-CHANNEL POW
Transistors Fets Mosfets Single
DirectFET™ Isometric MZ
HEXFET®
Active
$1.61 / unit (market reference)
MOQ: 187 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRF6641TRPBF |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 59.9mOhm @ 5.5A, 10V |
| Vgs(th) (Max) | 4.9V @ 150µA |
| Gate Charge (Qg) | 48 nC @ 10 V |
| Input Capacitance (Ciss) | 2290 pF @ 25 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | DIRECTFET™ MZ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRF6641TRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric MZ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 59.9mOhm @ 5.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF6641TRPBF
Alternatives & Replacements
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IRF6775MTRPBF
MOSFET N-CH 150V 4.9A DIRECTFET
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Rds On (Max) @ Id, Vgs | 59.9mOhm @ 5.5A, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 26A (Tc) |
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