IPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251
Transistors Fets Mosfets Single
TO-251-3 Stub Leads, IPak
CoolMOS™ CE
Discontinued at Digi-Key
$0.24 / unit (market reference)
MOQ: 1250 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IPS65R1K0CEAKMA1 |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) | 3.5V @ 200µA |
| Gate Charge (Qg) | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) | 328 pF @ 100 V |
| Power Dissipation (Max) | 37W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-251 |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
IPS65R1K0CEAKMA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Stub Leads, IPak package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1Ohm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPS65R1K0CEAKMA1
Alternatives & Replacements
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 37W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
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