What is the minimum order quantity for IPB45N06S409ATMA1?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 682 pcs.

How long does shipping take for IPB45N06S409ATMA1?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for IPB45N06S409ATMA1?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for IPB45N06S409ATMA1?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IPB45N06S409ATMA1

Name: IPB45N06S409ATMA1
Brand: Infineon Technologies
SKU: IPB45N06S409ATMA1

MOSFET N-CH 60V 45A TO263-3

IPB45N06S409ATMA1 by Infineon Technologies

Parameters

Parameter	Value
Brand	Infineon Technologies
Model	IPB45N06S409ATMA1
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Rds On (Max)	9.1mOhm @ 45A, 10V
Vgs(th) (Max)	4V @ 34µA
Gate Charge (Qg)	47 nC @ 10 V
Input Capacitance (Ciss)	3785 pF @ 25 V
Power Dissipation (Max)	71W (Tc)
Drive Voltage	10V
Supplier Device Package	PG-TO263-3-2
RoHS	RoHS
Part Status	Discontinued at Digi-Key

Application & Notes

IPB45N06S409ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.1mOhm @ 45A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 34µA
Rds On (Max) @ Id, Vgs	9.1mOhm @ 45A, 10V
Power Dissipation (Max)	71W (Tc)
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	3785 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)

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