HUF76113T3ST
N-CHANNEL POWER MOSFET
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
Active
Price available on request
MOQ: 589 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HUF76113T3ST |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 31mOhm @ 4.7A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) | 625 pF @ 25 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | SOT-223-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HUF76113T3ST by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 31mOhm @ 4.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HUF76113T3ST
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.7A, 10V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
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