HS54095TZ-E
MOSFET N-CH 600V 200MA TO92-3
Transistors Fets Mosfets Single
TO-226-3, TO-92-3 Short Body
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | HS54095TZ-E |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 16.5Ohm @ 100mA, 10V |
| Gate Charge (Qg) | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) | 66 pF @ 25 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HS54095TZ-E by Renesas Electronics America Inc is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Short Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16.5Ohm @ 100mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HS54095TZ-E
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 16.5Ohm @ 100mA, 10V |
| Power Dissipation (Max) | 750mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 66 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
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