HP8MA2TB1
HP8MA2 IS LOW ON-RESISTANCE AND
Transistors Fets Mosfets Arrays
8-PowerTDFN
Active
$1.69 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | HP8MA2TB1 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 22nC @ 10V, 25nC @ 10V |
| Input Capacitance (Ciss) | 1100pF @ 15V, 1250pF @ 15V |
| Power Dissipation (Max) | 3W (Ta) |
| Supplier Device Package | 8-HSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HP8MA2TB1 by Rohm Semiconductor is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HP8MA2TB1
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BSC0924NDIATMA1
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 3W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 25nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V, 1250pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 15A (Ta) |
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