HGT1S7N60C3DS9A
IGBT 600V 14A 60W TO263AB
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | HGT1S7N60C3DS9A |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 60 W |
| Supplier Device Package | D²PAK (TO-263) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HGT1S7N60C3DS9A by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGT1S7N60C3DS9A
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 23 nC |
| Power - Max | 60 W |
| Test Condition | 480V, 7A, 50Ohm, 15V |
| Switching Energy | 165µJ (on), 600µJ (off) |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 7A |
| Reverse Recovery Time (trr) | 37 ns |
| Current - Collector (Ic) (Max) | 14 A |
| Current - Collector Pulsed (Icm) | 56 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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