HGT1S3N60A4DS9A
IGBT 600V 17A 70W D2PAK
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | HGT1S3N60A4DS9A |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 70 W |
| Supplier Device Package | D²PAK (TO-263) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HGT1S3N60A4DS9A by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGT1S3N60A4DS9A
Alternatives & Replacements
View All →NGB18N40CLBT4
IGBT 430V 18A 115W D2PAK
NGB15N41CLT4G
IGBT N-CHAN 15A 410V D2PAK
IRG4BC30FD-SPBF
IGBT, 31A I(C), 600V V(BR)CES, N
ISL9V2040S3ST
INSULATED GATE BIPOLAR TRANSISTO
SKB02N60ATMA1
IGBT 600V 6A 30W TO263-3
SGW23N60UFDTM
N-CHANNEL IGBT
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 21 nC |
| Power - Max | 70 W |
| Test Condition | 390V, 3A, 50Ohm, 15V |
| Switching Energy | 37µJ (on), 25µJ (off) |
| Td (on/off) @ 25°C | 6ns/73ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 3A |
| Reverse Recovery Time (trr) | 29 ns |
| Current - Collector (Ic) (Max) | 17 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.