HAT2173H-EL-E
MOSFET N-CH 100V 25A LFPAK
Transistors Fets Mosfets Single
SC-100, SOT-669
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | HAT2173H-EL-E |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 15mOhm @ 12.5A, 10V |
| Vgs(th) (Max) | 6V @ 20mA |
| Gate Charge (Qg) | 61 nC @ 10 V |
| Input Capacitance (Ciss) | 4350 pF @ 10 V |
| Power Dissipation (Max) | 30W (Tc) |
| Drive Voltage | 8V, 10V |
| Supplier Device Package | LFPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HAT2173H-EL-E by Renesas Electronics America Inc is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-100, SOT-669 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 12.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HAT2173H-EL-E
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 6V @ 20mA |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 12.5A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
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