HAT2169H-EL-E
MOSFET N-CH 40V 50A LFPAK
Transistors Fets Mosfets Single
SC-100, SOT-669
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | HAT2169H-EL-E |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 3.5mOhm @ 25A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) | 6650 pF @ 10 V |
| Power Dissipation (Max) | 30W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | LFPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HAT2169H-EL-E by Renesas Electronics America Inc is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-100, SOT-669 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.5mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HAT2169H-EL-E
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 25A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6650 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
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