FW276-TL-2H
POWER FIELD-EFFECT TRANSISTOR
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
Obsolete
$0.37 / unit (market reference)
MOQ: 802 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FW276-TL-2H |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 450V |
| Rds On (Max) | 12.1Ohm @ 350mA, 10V |
| Vgs(th) (Max) | 4.5V @ 1mA |
| Gate Charge (Qg) | 3.7nC @ 10V |
| Input Capacitance (Ciss) | 55pF @ 20V |
| Power Dissipation (Max) | 1.6W (Tc) |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FW276-TL-2H by Rochester Electronics, LLC is an N-channel power MOSFET rated at 450V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12.1Ohm @ 350mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FW276-TL-2H
Alternatives & Replacements
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FW216A-TL-2W
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 10V Drive |
| Power - Max | 1.6W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 12.1Ohm @ 350mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 10V |
| Drain to Source Voltage (Vdss) | 450V |
| Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Tc) |
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