FQS4900TF
POWER FIELD-EFFECT TRANSISTOR, 1
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
QFET®
Active
$0.54 / unit (market reference)
MOQ: 560 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FQS4900TF |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 60V, 300V |
| Rds On (Max) | 550mOhm @ 650mA, 10V |
| Vgs(th) (Max) | 1.95V @ 20mA |
| Gate Charge (Qg) | 2.1nC @ 5V |
| Power Dissipation (Max) | 2W |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FQS4900TF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60V, 300V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 550mOhm @ 650mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FQS4900TF
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 2W |
| Vgs(th) (Max) @ Id | 1.95V @ 20mA |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 650mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 5V |
| Drain to Source Voltage (Vdss) | 60V, 300V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A, 300mA |
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