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Rochester Electronics, LLCTO-220-3 Full PackRoHS

FQPF13N50CTC003

MOSFET N-CHANNEL 500V, 13A

FQPF13N50CTC003 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3 Full Pack

Status

Active

$1.25 / unit (market reference)

MOQ: 241 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQPF13N50CTC003
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)480mOhm @ 6.5A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)56 nC @ 10 V
Input Capacitance (Ciss)2055 pF @ 25 V
Power Dissipation (Max)48W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220F-3
RoHSRoHS
Part StatusActive

Application & Notes

FQPF13N50CTC003 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 480mOhm @ 6.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs480mOhm @ 6.5A, 10V
Power Dissipation (Max)48W (Tc)
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds2055 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Tj)

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