PartsCube Global

PartsCube
ProductsManufacturersBOM & RFQResourcesQuality & Support
Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FQB27N25TM

N-CHANNEL POWER MOSFET

FQB27N25TM by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

Datasheet

View Datasheet ↗

Price available on request

MOQ: 251 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQB27N25TM
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)131mOhm @ 25.5A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)49 nC @ 10 V
Input Capacitance (Ciss)1800 pF @ 25 V
Power Dissipation (Max)417W (Tj)
Drive Voltage10V
Supplier Device PackageD2PAK (TO-263)
RoHSRoHS
Part StatusActive

Application & Notes

FQB27N25TM by Rochester Electronics, LLC is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 131mOhm @ 25.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FQB27N25TM

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB8442-F085

MOSFET N-CH 40V 28A TO263AB

Request QuoteRFQ →
onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTB90N02T4

MOSFET N-CH 24V 90A D2PAK

Request QuoteRFQ →
Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

N-CHANNEL POWER MOSFET

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

Request QuoteRFQ →
Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs131mOhm @ 25.5A, 10V
Power Dissipation (Max)417W (Tj)
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25.5A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.