FPF2C8P2NL07A
INSULATED GATE BIPOLAR TRANSISTO
Transistors Igbts Modules
F2 Module
Active
$75.16 / unit (market reference)
MOQ: 4 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FPF2C8P2NL07A |
| Package / Case | F2 Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 135 W |
| Supplier Device Package | F2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FPF2C8P2NL07A by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The F2 Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FPF2C8P2NL07A
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All Technical Specifications
| Input | Standard |
| IGBT Type | Field Stop |
| Power - Max | 135 W |
| Configuration | Three Phase |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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