PC
Rochester Electronics, LLC8-PowerWDFNRoHS

FDMS8690

MOSFET N-CH 30V 14A/27A 8MLP

FDMS8690 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerWDFN

Series

PowerTrench®

Status

Obsolete

$0.84 / unit (market reference)

MOQ: 357 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDMS8690
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)9mOhm @ 14A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)27 nC @ 10 V
Input Capacitance (Ciss)1680 pF @ 15 V
Power Dissipation (Max)2.5W (Ta), 37.8W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-MLP (5x6), Power56
RoHSRoHS
Part StatusObsolete

Application & Notes

FDMS8690 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9mOhm @ 14A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs9mOhm @ 14A, 10V
Power Dissipation (Max)2.5W (Ta), 37.8W (Tc)
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 27A (Tc)

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