FDMB3900AN
MOSFET 2N-CH 25V 7A 8MLP MICRO
Transistors Fets Mosfets Arrays
8-PowerWDFN
PowerTrench®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FDMB3900AN |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 23mOhm @ 7A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 17nC @ 10V |
| Input Capacitance (Ciss) | 890pF @ 13V |
| Power Dissipation (Max) | 800mW |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMB3900AN by onsemi is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 23mOhm @ 7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMB3900AN
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 800mW |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
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