PC
Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

FDD2570

MOSFET N-CH 150V 4.7A TO252

FDD2570 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

PowerTrench®

Status

Obsolete

$1.34 / unit (market reference)

MOQ: 224 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDD2570
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Rds On (Max)80mOhm @ 4.7A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)62 nC @ 10 V
Input Capacitance (Ciss)1907 pF @ 75 V
Power Dissipation (Max)3.2W (Ta), 70W (Tc)
Drive Voltage6V, 10V
Supplier Device PackageTO-252, (D-Pak)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDD2570 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 80mOhm @ 4.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs80mOhm @ 4.7A, 10V
Power Dissipation (Max)3.2W (Ta), 70W (Tc)
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds1907 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta)

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